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. 2000 Apr 3;84(14):3137-40.
doi: 10.1103/PhysRevLett.84.3137.

Electron-irradiation-induced radiolytic oxygen generation and microsegregation in silicon dioxide polymorphs

Affiliations

Electron-irradiation-induced radiolytic oxygen generation and microsegregation in silicon dioxide polymorphs

MA Stevens-Kalceff. Phys Rev Lett. .

Abstract

The first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and microscopy). Previously unreported near-infrared CL emission is observed at 0.968+/-0.003 eV from crystal alpha-SiO2 (quartz) and at 0.971+/-0.003 eV from amorphous a-SiO2 (fused quartz and silica glasses) at 290 K. The energy and width of the near-infrared CL emission from electron-irradiated alpha-SiO2 polymorphs is consistent with the O2 (1)Delta(g)-->(3)Sigma(-)(g) transition associated with molecular oxygen.

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