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. 2001 May 7;86(19):4342-5.
doi: 10.1103/PhysRevLett.86.4342.

Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

F Amy  1 , H Enriquez, P Soukiassian, P F Storino, Y J Chabal, A J Mayne, G Dujardin, Y K Hwu, C Brylinski
Affiliations

Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

F Amy et al. Phys Rev Lett. .

Abstract

The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.

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