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. 2003 Apr 18;90(15):155901.
doi: 10.1103/PhysRevLett.90.155901. Epub 2003 Apr 17.

Fluorine in silicon: diffusion, trapping, and precipitation

X D Pi  1 , C P Burrows, P G Coleman
Affiliations

Fluorine in silicon: diffusion, trapping, and precipitation

X D Pi et al. Phys Rev Lett. .

Abstract

The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12+/-0.08 eV. After a long annealing time at 700 degrees C, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range.

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