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. 2003 May-Jun;14(3):253-69.
doi: 10.1023/a:1023208926805.

Simulations of voltage clamping poorly space-clamped voltage-dependent conductances in a uniform cylindrical neurite

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Simulations of voltage clamping poorly space-clamped voltage-dependent conductances in a uniform cylindrical neurite

Daniel K Hartline et al. J Comput Neurosci. 2003 May-Jun.

Abstract

Significant error is made by using a point voltage clamp to measure active ionic current properties in poorly space-clamped cells. This can even occur when there are no obvious signs of poor spatial control. We evaluated this error for experiments that employ an isochronal I(V) approach to analyzing clamp currents. Simulated voltage clamp experiments were run on a model neuron having a uniform distribution of a single voltage-gated inactivating ionic current channel along an elongate, but electrotonically compact, process. Isochronal Boltzmann I(V) and kinetic parameter values obtained by fitting the Hodgkin-Huxley equations to the clamp currents were compared with the values originally set in the model. Good fits were obtained for both inward and outward currents for moderate channel densities. Most parameter errors increased with conductance density. The activation rate parameters were more sensitive to poor space clamp than the I(V) parameters. Large errors can occur despite "normal"-looking clamp curves.

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