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. 2004 Sep 10;93(11):117203.
doi: 10.1103/PhysRevLett.93.117203. Epub 2004 Sep 9.

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer

C Gould  1 , C Rüster, T Jungwirth, E Girgis, G M Schott, R Giraud, K Brunner, G Schmidt, L W Molenkamp
Affiliations

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer

C Gould et al. Phys Rev Lett. .

Abstract

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.

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