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. 2004 Nov 5;306(5698):1005-9.
doi: 10.1126/science.1103218.

Enhancement of ferroelectricity in strained BaTiO3 thin films

K J Choi  1 , M Biegalski, Y L Li, A Sharan, J Schubert, R Uecker, P Reiche, Y B Chen, X Q Pan, V Gopalan, L-Q Chen, D G Schlom, C B Eom
Affiliations

Enhancement of ferroelectricity in strained BaTiO3 thin films

K J Choi et al. Science. .

Abstract

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

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