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. 2006 Mar;6(3):463-7.
doi: 10.1021/nl052417e.

Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer

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Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer

Jialong Zhao et al. Nano Lett. 2006 Mar.

Abstract

We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.

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