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. 2006 Mar 28;103(13):5213-8.
doi: 10.1073/pnas.0511091103. Epub 2006 Mar 20.

Properties of human connexin 31, which is implicated in hereditary dermatological disease and deafness

Affiliations

Properties of human connexin 31, which is implicated in hereditary dermatological disease and deafness

Charles K Abrams et al. Proc Natl Acad Sci U S A. .

Abstract

The connexins are a family of at least 20 homologous proteins in humans that form aqueous channels connecting the interiors of coupled cells and mediating electrical and chemical communication. Mutations in the gene for human connexin 31 (hCx31) are associated with disorders of the skin and auditory system. Alterations in functional properties of Cx31 junctions are likely to play a role in these diseases; nonetheless, little is known about the properties of the wild-type channels. Here we show that hCx31 channels, like other connexin channels, are gated by voltage and close at low pH and when exposed to long-chain alkanols. Single-channel conductance of the fully open channel is approximately 85 pS, and it is permeable to Lucifer yellow, Alexa Fluor(350), ethidium bromide, and DAPI, which have valences of -2, -1, +1, and +2, respectively. In contrast to what has been reported for mouse Cx31, hCx31 appears to form functional heterotypic channels with all four connexins tested, Cx26, Cx30, Cx32, and Cx45. These findings provide an important first step in evaluating the pathogenesis of inherited human diseases associated with mutations in the gene for Cx31.

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Conflict of interest statement

Conflict of interest statement: No conflicts declared.

Figures

Fig. 1.
Fig. 1.
Expression and gating of hCx31. (A) Northern blot analysis of mRNA extracts from a Neuro2a cell line expressing hCx31 (left lane) and wild-type HeLa cells (right lane). (B) Western blot analysis of protein extracts from a Neuro2a cell line expressing hCx31 (left lane) and parental HeLa cells (right lane). (C) Immunostaining for hCx31WT expressed in HeLa cells shows punctate staining in a pattern consistent with the presence of gap junction plaques (arrows). (D) Representative current traces in response to Vj steps for homotypic hCx31 junctions between a pair of transfected Neuro2a cells. Both cells were voltage-clamped at 0 mV, junctional currents were recorded from cell 2, and cell 1 was stepped to voltages from zero to ±120 mV in increments of 20 mV. A 0.5-s +20-mV standardizing pulse step preceded each test pulse. (E) GjVj relation for homotypic hCx31 channels between transfected Neuro2a cells. Each circle in the GjVj plot is derived from a single determination of steady-state current. The solid line represents fits of the data to Boltzmann distributions for Vj of either sign. Parameters (+Vj, −Vj); Gmin, 0.24, 0.21; Gmax, 1.1, 1.1; A, 0.065, 0.076; V0, 43.8, 43.9. (F) Chemical gating and pH sensitivity of hCx31 channels between HeLa cells. Ij was measured during application of repeated Vj ramps from −22 to +22 mV every 1.5 s. Application of 2 mM heptanol led to a rapid reduction in junctional current to below detectable levels. Junctional current rapidly recovered when heptanol was removed from the bath. Application of CO2 saturated bath solution also caused rapid and reversible reduction in Ij.
Fig. 2.
Fig. 2.
Single-channel conductance and permeability of hCx31-EGFP channels measured in HeLa cells. (A) Junctional current records (middle trace) in response to voltage steps (bottom trace) from 0 to +70 mV. The dashed line on the current record is the residual conductance; the solid line is the fully open state of one channel. A point-by-point (1-ms) calculation of the junctional conductance is shown in the top row (gj). The conductance of the fully open channel is ≈85 pS, and a predominant residual conductance of ≈15 pS is seen. Two Insets on the top show expanded records from regions defined by rectangles and illustrate the slow gating transition from the open state toward the closed state (Left Inset) and the fast gating transition from the substate to the open state (Right Inset). (B) Permeability of hCx31 junctions to fluorescent dyes. Cell 1 (asterisk) was loaded with the dye of interest via the patch pipette in the whole-cell recording configuration, and a gigaohm seal (on cell configuration) with cell 2 was established via a second patch pipette. In this way, the dye that crossed into cell 2 (the postjunctional cell) was not lost by diffusion into pipette 2. After a suitable interval (usually 5 min), the gigaohm seal on cell 2 was ruptured, gj measured, and the presence of a cytoplasmic bridge excluded by application of 2 mM heptanol. As shown here, hCx31 is relatively nonselective, allowing passage of both negatively and positively charged dyes including Lucifer yellow (LY, −2), Alexa Fluor350 (AF350, −1), EtdBr (+1), and DAPI (+2).
Fig. 3.
Fig. 3.
hCx31 forms heterotypic junctions with Cx45. (A) The bottom trace shows the voltage applied to a HeLa cell expressing hCx31-EGFP and paired with a HeLa cell expressing Cx45 voltage clamped at 0. The middle trace shows the junctional currents measured in the cell expressing Cx45. The top trace shows gj calculated point by point. These heterotypic junctions have a markedly asymmetric response to Vj. (B) Steady-state GjVj relation for Cx45/Cx31-EGFP heterotypic junctions assembled from slow (4 min) ramps from 0 to +100 mV and from 0 to −100 mV. For increasing negativity on the hCx31-EGFP side, Gj increases up to ≈40 mV before decreasing again. For Vj of the opposite polarity, Gj decreases to a minimum at approximately −60 mV (Inset) and then shows a small increase. (C) Dependence of heterotypic Cx45/Cx31-EGFP coupling on holding current. A hCx31-EGFP-expressing cell (cell 1) was voltage-clamped at −10 mV and stepped by ±90 mV for 0.25 s with 0.25 s between pulses, and a coupled Cx45-expressing cell (cell 2) was current-clamped to approximately −12 mV. Hyperpolarizing voltage pulses starting before the record shown were applied to the hCx31-EGFP cell; these pulses caused gj to increase, and there was a substantial response in cell 2. After ≈5 s, the pulses were changed to depolarizing, and the responses in cell 2 decreased gradually with successive pulses, indicating decrease in gj. Expanded records in the Insets above show the changes associated with change in polarity in greater detail. Reapplication of hyperpolarizing pulses to cell 1 caused the responses in cell 2 to increase again, indicating increased gj. At ≈30 s, the hyperpolarizing current in cell 2 was increased; the responses to hyperpolarizing steps in cell 1 remained about the same, but the responses to depolarizing steps were greatly reduced. At ≈58 s, the hyperpolarizing current in cell 2 was decreased below the initial value, and the responses to depolarization and hyperpolarization of cell 1 were of more nearly the same amplitude.
Fig. 4.
Fig. 4.
hCx31 forms heterotypic junctions with Cx32 and Cx30. Representative Ij traces in response to Vj steps (A and C) and average normalized GjVj relations (B and D) for hCx31 paired heterotypically with Cx32 and Cx30. (A and C) Both cells were voltage-clamped at 0 mV, and cell 1 (expressing Cx32 or Cx30) was stepped to −20 mV for 0.2 s for normalization and then to voltages between +100 and −100 mV in 20-mV increments and Ij recorded from the hCx31-expressing cell. (B and D) Instantaneous (open triangles) and steady-state (filled squares) GjVj relations for each cell pair. The dashed lines represent best fit straight lines for the instantaneous gj). (E) An expanded view of the first 500 ms of traces in C. The dashed line is at Ij = 0.
Fig. 5.
Fig. 5.
hCx31 forms heterotypic junctions with Cx26. (A) Ij record (middle trace) from a hCx31-EGFP/Cx26 heterotypic cell pair in response to Vj ramps and steps applied to a cell expressing Cx26 (bottom trace). The corresponding junctional conductances are shown in the upper trace. Ij in response to a positive step declined to steady state over ≈15 s; fast gj recovery measured during repeated Vj ramps after a positive Vj step indicates that the fast gating mechanism was responsible for this gj decay. During a negative Vj step, gj decayed instantaneously by ≈25% and remained relatively constant. The small ramps caused rapid changes in gj (see B). (B) Changes in gj induced by the small ramps decaying from +28 to −28 mV every 2 s; gj increases quite linearly with voltage over that voltage range. The dashed line is a linear fit to the data. (C) Steady-state GjVj relation for a hCx31-EGFP/Cx26 heterotypic cell pair assembled from slow (4 min) ramps from 0 to +100 mV and from 0 to −100 mV. The dashed line represents the linear fit of data points at Vjs from −110 to +15 mV.

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