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. 2006 Sep;14(3):281-9.
doi: 10.1109/TNSRE.2006.881537.

Two-dimensional variation of bursting properties in a silicon-neuron half-center oscillator

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Two-dimensional variation of bursting properties in a silicon-neuron half-center oscillator

Mario F Simoni et al. IEEE Trans Neural Syst Rehabil Eng. 2006 Sep.

Abstract

We are developing hardware models of central pattern generators (CPGs) to enhance neural prostheses, create biologically based controllers for autonomous machines, and to better understand how biology creates stable and robust movements. Previously, we designed and implemented an analog integrated circuit model of a neuron with Hodgkin-Huxley like dynamics, the silicon neuron. In this work, we use silicon neurons to implement a half-center oscillator and show that the underlying dynamics of this CPG produce bursting behaviors that are well matched to the biological counterpart on which our model is based. In addition, we demonstrate the robustness of the bursting behavior by systematically varying two parameters in each silicon neuron and mapping the corresponding effects on the bursting.

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