doi: 10.1103/PhysRevLett.97.155701.
Epub 2006 Oct 9.
Large melting-point hysteresis of Ge nanocrystals embedded in SiO2
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- PMID: 17155336
- DOI: 10.1103/PhysRevLett.97.155701
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Large melting-point hysteresis of Ge nanocrystals embedded in SiO2
Phys Rev Lett.
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Free article
Erratum in
- Phys Rev Lett. 2006 Nov 17;97(20):209902
Abstract
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
Comment in
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Comment on "Large melting-point hysteresis of Ge nanocrystals embedded in SiO2".Phys Rev Lett. 2007 Aug 17;99(7):079601; author reply 079602. doi: 10.1103/PhysRevLett.99.079601. Epub 2007 Aug 17. Phys Rev Lett. 2007. PMID: 17930930 No abstract available.
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