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. 2006 Oct 13;97(15):155701.
doi: 10.1103/PhysRevLett.97.155701. Epub 2006 Oct 9.

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q Xu  1 , I D Sharp, C W Yuan, D O Yi, C Y Liao, A M Glaeser, A M Minor, J W Beeman, M C Ridgway, P Kluth, J W Ager 3rd, D C Chrzan, E E Haller
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Free article

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q Xu et al. Phys Rev Lett. .
Free article

Erratum in

  • Phys Rev Lett. 2006 Nov 17;97(20):209902

Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

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