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. 2006 Dec 1;97(22):227201.
doi: 10.1103/PhysRevLett.97.227201. Epub 2006 Nov 28.

Electric-field control of exchange bias in multiferroic epitaxial heterostructures

V Laukhin  1 , V Skumryev, X Martí, D Hrabovsky, F Sánchez, M V García-Cuenca, C Ferrater, M Varela, U Lüders, J F Bobo, J Fontcuberta
Affiliations

Electric-field control of exchange bias in multiferroic epitaxial heterostructures

V Laukhin et al. Phys Rev Lett. .

Abstract

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

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