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. 2006 Dec 22;97(25):256603.
doi: 10.1103/PhysRevLett.97.256603. Epub 2006 Dec 22.

Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

Kazuhiro Marumoto  1 , Shin-ichi Kuroda, Taishi Takenobu, Yoshihiro Iwasa
Affiliations
Free article

Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

Kazuhiro Marumoto et al. Phys Rev Lett. .
Free article

Abstract

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

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