Full analogue electronic realisation of the Hodgkin-Huxley neuronal dynamics in weak-inversion CMOS
- PMID: 18002178
- DOI: 10.1109/IEMBS.2007.4352512
Full analogue electronic realisation of the Hodgkin-Huxley neuronal dynamics in weak-inversion CMOS
Abstract
This paper presents a non-linear analog synthesis path towards the modeling and full implementation of the Hodgkin-Huxley neuronal dynamics in silicon. The proposed circuits have been realized in weak-inversion CMOS technology and take advantage of both log-domain and translinear transistor-level techniques.
Similar articles
-
A MOSFET-based model of a Class 2 nerve membrane.IEEE Trans Neural Netw. 2005 May;16(3):754-73. doi: 10.1109/TNN.2005.844855. IEEE Trans Neural Netw. 2005. PMID: 15941002
-
A multiconductance silicon neuron with biologically matched dynamics.IEEE Trans Biomed Eng. 2004 Feb;51(2):342-54. doi: 10.1109/TBME.2003.820390. IEEE Trans Biomed Eng. 2004. PMID: 14765707
-
Dynamically reconfigurable silicon array of spiking neurons with conductance-based synapses.IEEE Trans Neural Netw. 2007 Jan;18(1):253-65. doi: 10.1109/TNN.2006.883007. IEEE Trans Neural Netw. 2007. PMID: 17278476
-
Hybrid spiking models.Philos Trans A Math Phys Eng Sci. 2010 Nov 13;368(1930):5061-70. doi: 10.1098/rsta.2010.0130. Philos Trans A Math Phys Eng Sci. 2010. PMID: 20921012 Review.
-
Explaining neuronal membrane potentials: The Goldman equation vs. Lee's TELC hypothesis.Neuroscience. 2025 Feb 16;567:1-8. doi: 10.1016/j.neuroscience.2024.12.065. Epub 2025 Jan 2. Neuroscience. 2025. PMID: 39755228 Review.