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. 2008 Feb;108(3):210-20.
doi: 10.1016/j.ultramic.2007.04.020. Epub 2007 Oct 23.

TEM characterization of Ge precipitates in an Al-1.6at% Ge alloy

K Kaneko  1 , K Inoke, K Sato, K Kitawaki, H Higashida, I Arslan, P A Midgley
Affiliations

TEM characterization of Ge precipitates in an Al-1.6at% Ge alloy

K Kaneko et al. Ultramicroscopy. 2008 Feb.

Abstract

The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

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