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. 2008 Jan 11;100(1):016602.
doi: 10.1103/PhysRevLett.100.016602. Epub 2008 Jan 7.

Giant intrinsic carrier mobilities in graphene and its bilayer

S V Morozov  1 , K S Novoselov, M I Katsnelson, F Schedin, D C Elias, J A Jaszczak, A K Geim
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Free article

Giant intrinsic carrier mobilities in graphene and its bilayer

S V Morozov et al. Phys Rev Lett. .
Free article

Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

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