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. 2008 Jan 18;100(2):026102.
doi: 10.1103/PhysRevLett.100.026102. Epub 2008 Jan 14.

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface

Jun Nara  1 , Hiroshi Kajiyama, Tomihiro Hashizume, Yuji Suwa, Seiji Heike, Shinobu Matsuura, Taro Hitosugi, Takahisa Ohno
Affiliations

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface

Jun Nara et al. Phys Rev Lett. .

Abstract

The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.

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