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. 2008 Jul;4(7):920-4.
doi: 10.1002/smll.200701089.

Polyethylene glycol as a novel resist and sacrificial material for generating positive and negative nanostructures

Raymond G Sanedrin  1 , Ling Huang, Jae-Won Jang, Joseph Kakkassery, Chad A Mirkin
Affiliations

Polyethylene glycol as a novel resist and sacrificial material for generating positive and negative nanostructures

Raymond G Sanedrin et al. Small. 2008 Jul.
No abstract available

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Figures

Figure 1.
Figure 1.
Lateral force microscopy (LFM) images of polyethylene glycol A) line and B) dot nanostructures generated using DPN.
Figure 2.
Figure 2.
A) SEM and B) optical microscopy images of the generated positive Au nanostructures; C) contact-mode AFM image of PEG patterns used as etch resist to make the dot features in (D); D) tapping-mode AFM images of positive dot solid-state Au nanostructures generated from (C). One cell, which is designated by the white box in (A), is shown schematically in the inset of (A). The inset in (D) shows a zoomed-in AFM image of a generated Au dot array.
Figure 3.
Figure 3.
A) SEM image of a set of positive nanostructures in the form of the Northwestern University logo; the expanded area is a representation of the dot matrix map used to generate the structure; B) SEM image of positive line structures generated by DPN with the PEG resist and subsequent wet chemical etching; C) tapping-mode AFM image of the nanostructures shown in (B) and its corresponding height profile.
Figure 4.
Figure 4.
Tapping-mode AFM, height profile, and optical images of A,C) circular holes and B,D) line trenches generated using the negative feature polymer-based etching methodology. The insets in (A) and (B) show the zoomed-in AFM images of the negative nanostructures.
Scheme 1.
Scheme 1.
Polymer-based etch-resist methodology for generating positive and negative nanostructures.
See this image and copyright information in PMC

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