Demonstration of a silicon Raman laser
- PMID: 19484086
- DOI: 10.1364/opex.12.005269
Demonstration of a silicon Raman laser
Abstract
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
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