Exploring voltage-dependent ion channels in silico by hysteretic conductance

Abstract

Kinetic models of voltage-dependent ion channels are normally inferred from time records of macroscopic current relaxation or microscopic single channel data. A complementary explorative approach is outlined. Hysteretic conductance refers to conductance delays in response to voltage changes, delays at either macroscopic or microscopic levels of observation. It enables complementary assessments of model assumptions and gating schemes of voltage-dependent channels, e.g. independent versus cooperative gating, and multiple gating modes. Under the Hodgkin-Huxley condition of independent gating, and under ideal measurement conditions, hysteretic conductance makes it also possible to estimate voltage-dependent rate functions. The argument is mainly theoretical, based on experimental observations, and illustrated by simulations of Markov kinetic models.