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. 2010 Mar 5;104(9):096801.
doi: 10.1103/PhysRevLett.104.096801. Epub 2010 Mar 2.

Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot

M Xiao  1 , M G House, H W Jiang
Affiliations

Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot

M Xiao et al. Phys Rev Lett. .

Abstract

We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T1, respectively.

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