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. 2010 Mar 26;22(12):1346-50.
doi: 10.1002/adma.200902450.

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong  1 , Young-Geun Ha, Jooho Moon, Antonio Facchetti, Tobin J Marks
Affiliations

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong et al. Adv Mater. .
No abstract available

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