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. 2009 Jul 25;4(11):1309-14.
doi: 10.1007/s11671-009-9397-4.

Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy

Ting Zhang  1 , Xinan Zhang, Linghong Ding, Weifeng Zhang
Affiliations

Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy

Ting Zhang et al. Nanoscale Res Lett. .

Abstract

The Na0.5Bi0.5TiO3(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol-gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

Keywords: Impedance spectroscopy; Interfacial characteristics; Na0.5Bi0.5TiO3(NBT) thin films; Oxygen vacancies; Resistance switching.

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Figures

Figure 1
Figure 1
aCross section of the sample obtained from four-layered deposition on the FTO conducting glass measured by SEM.bAFM image of the NBT thin films annealed at 750 °C.cSchematic diagram ofI–Vmeasurement system
Figure 2
Figure 2
XRD patterns of the NBT thin films on FTO conducting glass
Figure 3
Figure 3
I–Vcharacteristics of Au/NBT/FTO sandwich structure for resistance switching with different scanning rates.Inset: 100 consecutive measurements were performed with a 0.05 V/s scanning rate at room temperature
Figure 4
Figure 4
aImpedance spectra of the NBT memory device are represented by dashed lines. Impedance spectra simulated are represented bysolid lines,and the corresponding equivalent circuit models are shown in the insert.bFrequency dependence of the impedance spectra in the on state and off state.Solidsymbols correspond to the high-resistance states andopensymbols correspond to low-resistance states
Figure 5
Figure 5
Plots of retention of the device, and theinsetshows multilevel switching behavior measurement at the ambient temperature
See this image and copyright information in PMC

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