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. 2008 Nov 12;19(45):455605.
doi: 10.1088/0957-4484/19/45/455605. Epub 2008 Oct 9.

Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

Chee Huei Lee  1 , Jiesheng Wang, Vijaya K Kayatsha, Jian Y Huang, Yoke Khin Yap
Affiliations

Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

Chee Huei Lee et al. Nanotechnology. .

Abstract

Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.

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