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. 2011 Oct 12;11(10):4134-7.
doi: 10.1021/nl2019068. Epub 2011 Sep 12.

Gate-activated photoresponse in a graphene p-n junction

Max C Lemme  1 , Frank H L Koppens, Abram L Falk, Mark S Rudner, Hongkun Park, Leonid S Levitov, Charles M Marcus
Affiliations

Gate-activated photoresponse in a graphene p-n junction

Max C Lemme et al. Nano Lett. .

Abstract

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

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