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. 2012 Apr 21;4(8):2571-4.
doi: 10.1039/c2nr30133d. Epub 2012 Mar 14.

High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

Haibo Dong  1 , Xiaoxian Zhang, Duan Zhao, Zhiqiang Niu, Qingsheng Zeng, Jinzhu Li, Le Cai, Yanchun Wang, Weiya Zhou, Min Gao, Sishen Xie
Affiliations

High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

Haibo Dong et al. Nanoscale. .

Abstract

The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn(2)SnO(4) nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.

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