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. 2012 Apr 23;20(9):9999-10003.
doi: 10.1364/OE.20.009999.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors

Jae Hyoung Ryu  1 , Hee Yun Kim, Hyun Kyu Kim, Yashpal Singh Katharria, Nam Han, Ji Hye Kang, Young Jae Park, Min Han, Beo Deul Ryu, Kang Bok Ko, Eun-Kyoung Suh, Chang-Hee Hong
Affiliations

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors

Jae Hyoung Ryu et al. Opt Express. .

Abstract

The effect of air-gap/GaN DBR structure, fabricated by selective lateral wet-etching, on InGaN light-emitting diodes (LEDs) is investigated. The air-gap/GaN DBR structures in LED acts as a light reflector, and thereby improve the light output power due to the redirection of light into escape cones on both front and back sides of the LED. At an injection current of 20 mA, the enhancement in the radiometric power as high as 1.91 times as compared to a conventional LED having no DBR structure and a far-field angle as low as 128.2° are realized with air-gap/GaN DBR structures.

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