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. 2012 Jul 10;24(26):3549-54.
doi: 10.1002/adma.201201361. Epub 2012 Jun 8.

GaS and GaSe ultrathin layer transistors

Dattatray J Late  1 , Bin Liu, Jiajun Luo, Aiming Yan, H S S Ramakrishna Matte, Matthew Grayson, C N R Rao, Vinayak P Dravid
Affiliations

GaS and GaSe ultrathin layer transistors

Dattatray J Late et al. Adv Mater. .

Abstract

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

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