doi: 10.1002/adma.201201595.
Epub 2012 Jun 8.
Resistive switching and magnetic modulation in cobalt-doped ZnO
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- PMID: 22678882
- DOI: 10.1002/adma.201201595
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Resistive switching and magnetic modulation in cobalt-doped ZnO
Adv Mater.
.
Abstract
A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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