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. 2012 Nov 14;24(43):5832-6.
doi: 10.1002/adma.201201909. Epub 2012 Aug 20.

High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared

Woong Choi  1 , Mi Yeon Cho, Aniruddha Konar, Jong Hak Lee, Gi-Beom Cha, Soon Cheol Hong, Sangsig Kim, Jeongyong Kim, Debdeep Jena, Jinsoo Joo, Sunkook Kim
Affiliations

High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared

Woong Choi et al. Adv Mater. .

Abstract

Phototransistors based on multilayer MoS(2) crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS(2) phototransistors. Multilayer MoS(2) phototransistors further exhibit high room temperature mobilities (>70 cm(2) V(-1) s(-1) ), near-ideal subthreshold swings (~70 mV decade(-1) ), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

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