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Comment
. 2013 Mar;8(3):147-8.
doi: 10.1038/nnano.2013.31.

Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'

B Radisavljevic, A Kis
Comment

Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'

B Radisavljevic et al. Nat Nanotechnol. 2013 Mar.
No abstract available

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Comment on

  • Single-layer MoS2 transistors.
    Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Radisavljevic B, et al. Nat Nanotechnol. 2011 Mar;6(3):147-50. doi: 10.1038/nnano.2010.279. Epub 2011 Jan 30. Nat Nanotechnol. 2011. PMID: 21278752
  • Measurement of mobility in dual-gated MoS₂ transistors.
    Fuhrer MS, Hone J. Fuhrer MS, et al. Nat Nanotechnol. 2013 Mar;8(3):146-7. doi: 10.1038/nnano.2013.30. Nat Nanotechnol. 2013. PMID: 23459545 No abstract available.

References

    1. Proc Natl Acad Sci U S A. 2005 Jul 26;102(30):10451-3 - PubMed
    1. Nat Nanotechnol. 2011 Mar;6(3):147-50 - PubMed
    1. Nat Nanotechnol. 2013 Mar;8(3):146-7 - PubMed

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