Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors
- PMID: 23595633
- DOI: 10.1039/c3cc41764f
Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors
Abstract
Tetra[2,3-thienylene] planarised by sulphur bridges and radially π-extended with (triisopropylsilyl)ethynyl groups had a narrow HOMO-LUMO gap due to the antiaromatic cyclooctatetraene core, and its single crystal FET device exhibited ambipolar characteristics with hole and electron mobilities of up to 0.40 and 0.18 cm(2) V(-1) s(-1), respectively.