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. 2013 Jul 10;13(7):3023-8.
doi: 10.1021/nl400902v. Epub 2013 Jun 28.

Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

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Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y J Zhang et al. Nano Lett. .

Abstract

Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

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