Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor
- PMID: 23795701
- DOI: 10.1021/nl400902v
Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor
Abstract
Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.
Publication types
LinkOut - more resources
Full Text Sources
Other Literature Sources
Research Materials