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. 2013 Sep 6;25(33):4663-7.
doi: 10.1002/adma.201205098. Epub 2013 Jul 1.

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Benjamin D Naab  1 , Scott Himmelberger, Ying Diao, Koen Vandewal, Peng Wei, Björn Lussem, Alberto Salleo, Zhenan Bao
Affiliations

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Benjamin D Naab et al. Adv Mater. .

Abstract

An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

Keywords: blend aligned crystals; complementary inverters; electron traps; grain boundaries; organic electronics.

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