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. 2013:3:2613.
doi: 10.1038/srep02613.

Integrated prototype nanodevices via SnO₂ nanoparticles decorated SnSe nanosheets

Jian-Jun Wang  1 , Ai-Feng Lv, Yong-Qing Wang, Bo Cui, Hui-Juan Yan, Jin-Song Hu, Wen-Ping Hu, Yu-Guo Guo, Li-Jun Wan
Affiliations

Integrated prototype nanodevices via SnO₂ nanoparticles decorated SnSe nanosheets

Jian-Jun Wang et al. Sci Rep. 2013.

Abstract

Hybrid materials made from all inorganic components are intriguing in many fields, because they have shown in-depth potential use for electronic and optoelectronic applications including solar cells, gas sensors, photodetectors, and field effect transistors. Hybrid materials made from SnO₂ nanoparticles on SnSe nanosheets have been synthesized via a facile, lost-cost and safe solution method, and have been demonstrated as promising multifunctional materials in various prototype devices, including gas sensors, photodetectors, and field effect transistors.

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Figures

Figure 1
Figure 1. Structure characterization.
(a) A XRD pattern of as-synthesized sample. (b) High-resolution XPS spectrum of Sn 3d.
Figure 2
Figure 2. Morphology and structure characterization of SnO2/SnSe nanosheets.
(a) the corresponding 3D AFM image. (b) HRAFM images of the surface of a SnO2/SnSe nanosheet. (c, d) Low magnification TEM images, (e, f, g) HRTEM images, and (h) SAED patterns of a single nanosheet. STEM-EDS elemental maps of a single nanosheet. (i) STEM image, (j) O elemental map, (k) Se elemental map, (l) Sn elemental map.
Figure 3
Figure 3. Field effect transistors and photodetectors based on a single SnO2/SnSe nanosheet.
(a) Schematic structure of the device, (b) Output characteristics of the individual nanosheet transistors; (c) transfer characteristics of the device at a fixed source/drain voltage, VSD = −5 V. (d) Dark current and photocurrents at an incident light densities of 5.6 mW cm−2. (e) On/off switching of the device at an incident light density of 5.6 mW cm−2 and a bias voltage of 5 V. (f) different currents of the device without and with a gate voltage of −30 V in dark and under light.
Figure 4
Figure 4. Gas sensors based on SnO2/SnSe nanosheets.
(a) Transient response of the sensor to CO (100–1000 ppm) at 260°C. (b) on/off switching of the sensor response to 1000 ppm CO diluted in dry air at room temperature.
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