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. 2013 Nov 21;8(1):497.
doi: 10.1186/1556-276X-8-497.

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Rui Zhang, Kuan-Chang Chang, Ting-Chang Chang  1 , Tsung-Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Jung-Hui Chen, Tai-Fa Young, Chih-Cheng Shih, Ya-Liang Yang, Yin-Chih Pan, Tian-Jian Chu, Syuan-Yong Huang, Chih-Hung Pan, Yu-Ting Su, Yong-En Syu, Simon M Sze
Affiliations

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Rui Zhang et al. Nanoscale Res Lett. .

Abstract

In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.

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Figures

Figure 1
Figure 1
RRAM device, resistive switching characteristic, reset voltage distributions, and distributions of HRS and LRS. (a) The RRAM device schematic structure. (b) Resistive switching characteristic comparison of single and double switching layer RRAM. (c) Comparison of reset voltage distributions. The lower inset shows the corresponding I-V curve of reset process in linear scale. (d) Distributions of HRS and LRS of Zr:SiO2 and Zr:SiO2/C:SiO2 RRAM devices.
Figure 2
Figure 2
Current fitting of HRS and LRS of Zr:SiO2 and Zr:SiO2/C:SiO2 RRAM devices, respectively (a, b). The activation energy of HRS and LRS for hopping conduction is 74.7 and 47.4 meV, respectively.
Figure 3
Figure 3
Raman spectra of C SP2 and C SP3 in C:SiOxfilm. It confirms the existence of graphene oxide. The upper inset is the corresponding FTIR spectra, from which graphene oxide coupling OH peak can be observed at the wavenumber of 3,665 cm-1.
Figure 4
Figure 4
Endurance characteristics of (a) Pt/Zr:SiO 2 /TiN structure and (b) Pt/Zr:SiO 2 /C:SiO 2 /TiN structure.
See this image and copyright information in PMC

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