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. 2013 Dec 2;19(49):16502-11.
doi: 10.1002/chem.201301631. Epub 2013 Nov 8.

Towards polyoxometalate-cluster-based nano-electronics

Laia Vilà-Nadal  1 , Scott G Mitchell, Stanislav Markov, Christoph Busche, Vihar Georgiev, Asen Asenov, Leroy Cronin
Affiliations

Towards polyoxometalate-cluster-based nano-electronics

Laia Vilà-Nadal et al. Chemistry. .

Abstract

We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM.

Keywords: nanoelectronics; nanosystems; polyoxometalates; redox-active systems.

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