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. 2014 Feb 23:2014:136340.
doi: 10.1155/2014/136340. eCollection 2014.

100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès  1 , Sonia Bagumako  1 , Ludovic Desplanque  1 , Nicolas Wichmann  1 , Sylvain Bollaert  1 , François Danneville  1 , Xavier Wallart  1 , Yannick Roelens  1
Affiliations

100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès et al. ScientificWorldJournal. .

Abstract

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

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Figures

Figure 1
Figure 1
AlSb/InAs heterostructure.
Figure 2
Figure 2
100 nm AlSb/InAs HEMT.
Figure 3
Figure 3
Drain current-voltage characteristic of 100 nm AlSb/InAs HEMT. V gs is varying from 0 V to −1.4 V with −0.2 V step. (Crosses are polarisation conditions for measurements at peak f T).
Figure 4
Figure 4
f max⁡ and f T extrapolated from Mason's unilateral gain U and current gain |H 21|2 for V ds = 80 mV and V ds = 240 mV.
Figure 5
Figure 5
Extrapolated (f T, f max⁡) plotted as a function of DC power consumption calculated as V ds × I ds.
Figure 6
Figure 6
Small-signal equivalent circuit tacking into account gate leakage current (R gg) and impact ionisation (g m2).
Figure 7
Figure 7
S-parameters measured (blue dots) and simulated (red curves) at V ds = 80 mV and V ds = 240 mV.
Figure 8
Figure 8
Small-signal equivalent circuit with noise sources for AlSb/InAs HEMT at V ds = 80 mV.
Figure 9
Figure 9
Minimum noise figure NFmin⁡ and associated gain G ass  as a function of power consumption at 12 GHz for V ds = 80 mV.
Figure 10
Figure 10
Noise equivalent resistance R n and output noise temperature T out as a function of power consumption at 12 GHz for V ds = 80 mV.
See this image and copyright information in PMC

References

    1. Deal W, Mei XB, Leong KMKH, Radisic V, Sarkozy S, Lai R. THz monolithic integrated circuits using InP high electron mobility transistors. IEEE Transactions on Terahertz Science and Technology. 2011;1(1):25–32.
    1. Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG. Antimonide-based compound semiconductors for electronic devices: a review. Solid-State Electronics. 2005;49(12):1875–1895.
    1. Chang C-A, Chang LL, Mendez EE, Christie MS, Esaki L. Electron densities in InAs-AlSb quantum wells. Journal of Vacuum Science & Technology B. 1984;2(2):214–216.
    1. Tuttle G, Kroemer H. An AlSb/InAs/AlSb quantum well HFT. IEEE Transactions on Electron Devices. 1987;34(11):p. 2358.
    1. Ma BY, Bergman J, Chen P, et al. InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers. IEEE Transactions on Microwave Theory and Techniques. 2006;54(12):4448–4454.

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