Graphene doping methods and device applications

Abstract

Graphene has recently been studied as a promising material to replace and enhance conventional electronic materials in various fields such as electronics, photovoltaics, sensors, etc. However, for the electronic applications of graphene prepared by various techniques such as chemical vapor deposition, chemical exfoliation, mechanical exfoliation, etc., critical limitations are found due to the defects in the graphene in addition to the absence of a semiconducting band gap. For that, many researchers have investigated the doped graphene which is effective to tailor its electronic property and chemical reactivity. This work presents a review of the various graphene doping methods and their device applications. As doping methods, direct synthesis method and post treatment method could be categorized. Because the latter case has been widely investigated and used in various electronic applications, we will focus on the post treatment method. Post treatment method could be further classified into wet and dry doping methods. In the case of wet doping, acid treatment, metal chloride, and organic material coating are the methods used to functionalize graphene by using dip-coating, spin coating, etc. Electron charge transfer achieved from graphene to dopants or from dopants to graphene makes p-type or n-type graphenes, respectively, with sheet resistance reduction effect. In the case of dry doping, it can be further categorized into electrostatic field method, evaporation method, thermal treatment method, plasma treatment method, etc. These doping techniques modify Fermi energy level of graphene and functionalize the property of graphene. Finally, some perspectives and device applications of doped graphene are also briefly discussed.