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. 2015 Jan 7;11(1):90-5.
doi: 10.1002/smll.201400989. Epub 2014 Aug 18.

Low carrier density epitaxial graphene devices on SiC

Yanfei Yang  1 , Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano A Real, Paola Barbara, Chi-Te Liang, David B Newell, Randolph E Elmquist
Affiliations

Low carrier density epitaxial graphene devices on SiC

Yanfei Yang et al. Small. .

Abstract

The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.

Keywords: aqua regia; carrier density; epitaxial graphene; quantum Hall plateau.

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