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. 2014 Sep 22:4:6395.
doi: 10.1038/srep06395.

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

Jiangwei Liu  1 , Meiyong Liao  2 , Masataka Imura  2 , Akihiro Tanaka  3 , Hideo Iwai  3 , Yasuo Koide  4
Affiliations

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

Jiangwei Liu et al. Sci Rep. .

Abstract

Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10(-5) A · cm(-2) for the gate voltage ranging from -4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.

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Conflict of interest statement

The authors declare no competing financial interests.

Figures

Figure 1
Figure 1. XPS spectra of ZrO2 layer.
(a) Zr 3d, (b) O 1 s, and (c) O 1 s photoelectron energy loss spectra for the SD-ZrO2 (32.5 nm) layer. The Zr 3d and O 1 s core level spectra were fitted by Voigt (mixed Lorenzian-Gaussian) lineshapes after the application of Shirley background (dashed line). The solid lines matched to the dots are the sums of Voigt lineshapes and background.
Figure 2
Figure 2. Electrical properties of the MIS diode.
(a) The J-V and (b) the C-V curves for the SD-ZrO2/ALD-Al2O3/H-diamond MIS diode. (c) Hole concentration of the H-diamond channel layer as a function of depth from the ALD-Al2O3/H-diamond interface to the H-diamond epitaxial layer.
Figure 3
Figure 3. Schematic cross-sectional structures of the SD-ZrO2/ALD-Al2O3/H-diamond MISFETs.
(a) Without and (b) with IS/D-CH.
Figure 4
Figure 4. Electrical properties of the MISFETs.
The IDS-VDS, IDS-VGS, formula image, and gm-VGS characteristics of the SD-ZrO2/ALD-Al2O3/H-diamond MISFETs without [Figs. 4 (a)0,1,2] and with [Figs. 4 (b)0,1,2] IS/D-CH.
See this image and copyright information in PMC

References

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