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. 2015 Apr 24;27(16):2595-601.
doi: 10.1002/adma.201405632. Epub 2015 Mar 13.

TiS3 transistors with tailored morphology and electrical properties

Joshua O Island  1 , Mariam Barawi, Robert Biele, Adrián Almazán, José M Clamagirand, José R Ares, Carlos Sánchez, Herre S J van der Zant, José V Álvarez, Roberto D'Agosta, Isabel J Ferrer, Andres Castellanos-Gomez
Affiliations

TiS3 transistors with tailored morphology and electrical properties

Joshua O Island et al. Adv Mater. .

Abstract

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

Keywords: TiS3; density functional theory; exfoliation potential; field-effect transistors; mechanical exfoliation; monolayers; morphology; sulphur vacancy.

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