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. 2015 Mar 24:5:9291.
doi: 10.1038/srep09291.

Cu2ZnSnS4 absorption layers with controlled phase purity

Chia-Ying Su  1 , Chiu-Yen Chiu  2 , Jyh-Ming Ting  3
Affiliations

Cu2ZnSnS4 absorption layers with controlled phase purity

Chia-Ying Su et al. Sci Rep. .

Abstract

We report the synthesis and characterization of Cu2ZnSnS4 (CZTS) with controlled phase purity. The precursor was first prepared using sequential electrodeposition of Cu, Zn, and Sn in different orders. The Cu/(Sn+Zn) ratio in each stacking order was also varied. The precursor was subjected to annealing at 200°C and sulfurization at 500°C in a 5%-H2S/Ar atmosphere for the formation of CZTS. The phase evolutions during the electrodeposition and annealing stages, and the final phase formation at the sulfurization stage were examined using both x-ray diffractometry and Raman spectroscopy, both of which are shown to be complimentary tools for phase identification. Detailed growth path is therefore reported. We also demonstrate by controlling the stacking order and the Cu/(Sn+Zn) ratio, CZTS with a phase purity as high as 93% is obtained.

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Figures

Figure 1
Figure 1. XRD patterns of as-plated films.
The numbers follows the sample IDs represent the Cu/(Sn+Zn) ratios.
Figure 2
Figure 2. XRD patterns for heat treated samples.
(A) Cu/(Sn+Zn) = 1.8, (B) Cu/(Sn+Zn) = 1.26, and (C) Cu/(Sn+Zn) = 0.9. The heat treatment was performed at 200°C for 30 min in H2S.
Figure 3
Figure 3. SEM cross-sectional and top view of sulfuirzed CZTS samples: (A) CTZ-0.9, (B) CTZ-1.26, and (C) CTZ-1.8.
Figure 4
Figure 4. XRD patterns of CZTS films.
(A) CZT, (B) CTZ, (C) CTZC, and (D) CZCT.
Figure 5
Figure 5. Raman spectra of CZTS films.
(A) CZT, (B) CTZ, (C) CTZC, and (D) CZCT.
Figure 6
Figure 6. TEM analysis of sulfurized CTZ-1.8sample.
(A) Bright field image. (B) Diffraction patterns of areas (B) I and (C) II.
Figure 7
Figure 7. Phase formation during each stage for Samples (A) CZT, (B) CTZ, (C) CTZC, and (D) CZCT.
See this image and copyright information in PMC

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