Corrigendum: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
- PMID: 25801406
- DOI: 10.1038/nmat4236
Corrigendum: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Erratum for
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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.Nat Mater. 2012 Feb 26;11(4):301-5. doi: 10.1038/nmat3256. Nat Mater. 2012. PMID: 22367002
References
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- Nat Mater. 2012 Feb 26;11(4):301-5 - PubMed
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