Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
. 2015 Mar 24:5:9446.
doi: 10.1038/srep09446.

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

Ye Zhou  1 , Su-Ting Han  1 , Prashant Sonar  2 , Xinlei Ma  3 , Jihua Chen  4 , Zijian Zheng  3 , V A L Roy  5
Affiliations

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

Ye Zhou et al. Sci Rep. .

Abstract

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.

PubMed Disclaimer

Figures

Figure 1
Figure 1. Polymer/GO based ambipolar transistor.
(a) Schematic illustration of the PDPP-TBT/GO hybrids adopted in the transistor structure. (b) TEM image and SAED pattern of the polymer. Scale bar, 200 nm. (c) AFM image of the GO layer. (d) XRD patterns of the polymer and polymer/GO hybrids. Scale bar, 1 μm. (e) AFM image of the polymer on SiO2. Scale bar, 1 μm. (f) AFM image of the polymer on GO. Scale bar, 1 μm.
Figure 2
Figure 2. Electrical performances of the polymer/GO transistor.
(a) Output characteristics of the hybrids at hole-enhancement mode. (b) Output characteristics of the hybrids at electron-enhancement mode. (c) Transfer characteristics of the hybrids at hole-enhancement mode. (d) Transfer characteristics of the hybrids at electron-enhancement mode.
Figure 3
Figure 3. Dominant polarity conversion.
(a) Transfer characteristics of the hybrids at hole-enhancement mode (VDS = −30 V) after negative gate pulse. (b) Transfer characteristics of the hybrids at hole-enhancement mode (VDS = −30 V) after positive gate pulse. (c) Transfer characteristics of the hybrids at electron-enhancement mode (VDS = 30 V) after positive gate pulse. (d) Transfer characteristics of the hybrids at electron-enhancement mode (VDS = 30 V) after negative gate pulse. (e) Schematic illustration of the hole/electron trapping process. (f) Schematic illustration of the electron/hole trapping process. (g) SKPM image of the hole/electron trapping process. (h) SKPM image of the electron/hole trapping process.
Figure 4
Figure 4. Ambipolar inverters.
(a) Schematic illustration of the PDPP-TBT based inverter. (b) Voltage transfer curve of the PDPP-TBT based inverter. (c) Signal gain of the PDPP-TBT based inverter. (d) Schematic illustration of the PDPP-TBT/GO based inverter. (e) Voltage transfer curve of the PDPP-TBT/GO based inverter. (f) Signal gain of the PDPP-TBT/GO based inverter.
See this image and copyright information in PMC

References

    1. Zaumseil J., Friend R. H. & Sirringhaus H. Spatial control of the recombination zone in an ambipolar light-emitting organic transistor. Nat. Mater. 5, 69–74 (2006).
    1. Capelli R. et al. Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes. Nat. Mater. 9, 496–503 (2010). - PubMed
    1. Bürgi L. et al. High-Mobility Ambipolar Near-Infrared Light-Emitting Polymer Field-Effect Transistors. Adv. Mater. 20, 2217–2224 (2008).
    1. Smith J. et al. Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1. Adv. Mater. 22, 3598–3602 (2010). - PubMed
    1. Eda G., Fanchini G. & Chhowalla M. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Nat. Nanotechnol. 3, 270–274 (2008). - PubMed

Publication types

LinkOut - more resources