Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
. 2015 Jun 15;23(12):15816-23.
doi: 10.1364/OE.23.015816.

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Ju Hyung Nam, Farzaneh Afshinmanesh, Donguk Nam, Woo Shik Jung, Theodore I Kamins, Mark L Brongersma, Krishna C Saraswat
Free article

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Ju Hyung Nam et al. Opt Express. .
Free article

Abstract

A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

PubMed Disclaimer

LinkOut - more resources