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. 2015 Jul;15(7):5264-6.
doi: 10.1166/jnn.2015.10408.

Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates

K S Jeon, J H Sung, M W Lee, H Y Song, E A Lee, S O Kim, H J Choi, H Y Shin, W H Park, Y I Jang, M G Kang, Y H Choi, J S Lee, D H Ko, H Y Ryu

Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates

K S Jeon et al. J Nanosci Nanotechnol. 2015 Jul.

Abstract

We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

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