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. 2015 Nov;27(42):6689-95.
doi: 10.1002/adma.201502968. Epub 2015 Sep 28.

Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

Dandan Wang  1   2 , Davide Fracasso  1   2 , Argo Nurbawono  3 , Harshini V Annadata  1   2 , C S Suchand Sangeeth  1   2 , Li Yuan  1   2 , Christian A Nijhuis  1   2
Affiliations

Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

Dandan Wang et al. Adv Mater. 2015 Nov.

Abstract

The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.

Keywords: EGaIn; dielectric response; molecular electronics; self-assembled monolayers; tunneling junctions.

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