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. 2015 Oct 26:5:15770.
doi: 10.1038/srep15770.

Self-aligned, full solution process polymer field-effect transistor on flexible substrates

Yan Yan  1 , Long-Biao Huang  1 , Ye Zhou  2 , Su-Ting Han  1 , Li Zhou  1 , Jiaqing Zhuang  1 , Zong-Xiang Xu  3 , V A L Roy  1   4
Affiliations

Self-aligned, full solution process polymer field-effect transistor on flexible substrates

Yan Yan et al. Sci Rep. .

Abstract

Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests.

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Figures

Figure 1
Figure 1. Device fabrication process (a) Schematic diagram depicting a polymer FET device and the fabrication process of bottom-contact top-gate full polymer FETs on flexible PET.
(b) An optical image of the PEDOT/PSS solution self-aligned on the patterned S/D regions by the dipping method and (c) PEDOT/PSS (1:1) solution self-aligned on the patterned gate regions by the dipping method and (d) the flexible polymer FETs based on PET substrates.
Figure 2
Figure 2. Characterization of polymeric film.
(a) RMS roughness dependence on the reaction time for confined photo-catalytic oxidation method, UV/ozone, and O2 plasma treatment on PET and (b) PMMA substrates. (c) Leakage current as a function of the applied electric field of PMMA insulator treated with CPO (10 mins), Plasma (10 mins) and UV/ozone (8 mins).
Figure 3
Figure 3. Characterization of polymeric film.
XPS spectra of modified and pristine PMMA surfaces: S2p peak (a,c); N1s peak (b,d), the upper: after modified; the lower: before modified. ((NH4)2S2O8, 30 wt%; irradiation time: 10 mins).
Figure 4
Figure 4. Various channel length.
(a) Photographs of various PEDOT/PSS (1:1) S/D electrodes patterning by dipping and spin-coating method. (b) Schematic diagram depicting PEDOT/PSS solution splitting on patterned hydrophobic/hydrophilic region.
Figure 5
Figure 5. Characteristics of FETs.
(a) Transfer curve (VDS = −40 V) and (b) Output curve of flexible full polymer FETs (W = 1000 μm, L = 50 μm, electrode fabricated by dipping method). Flexible stability characteristics of (c) Mobility as a function of bending cycles (strain = 1%) and (d) Mobility as a function of tensile strain.
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