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. 2015 Dec 22:5:18621.
doi: 10.1038/srep18621.

Wireless thin film transistor based on micro magnetic induction coupling antenna

Byoung Ok Jun  1 , Gwang Jun Lee  1 , Jong Gu Kang  1   2 , Seunguk Kim  1 , Ji-Woong Choi  1 , Seung Nam Cha  3 , Jung Inn Sohn  3 , Jae Eun Jang  1
Affiliations

Wireless thin film transistor based on micro magnetic induction coupling antenna

Byoung Ok Jun et al. Sci Rep. .

Abstract

A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the 'internet of things' (IoT).

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Figures

Figure 1
Figure 1. Schematic diagram of wireless thin film transistor concept.
Figure 2
Figure 2
(a) Schematic diagram of the wireless α-IGZO TFT concept. (b) Optical microscope (OM) images of the fabricated wireless α-IGZO TFT (left) and scanning electron microscope (SEM) image of ZnO nanowire and core structure (right). (c) Inductances of various micro coils according to MC effects. (d) Quality factors of micro coils according to MC effects. (e) Wirelessly transferred output voltage of various micro coil designs according to the frequency using solenoid type TX antenna. (f) Inductance and quality factor of TX.
Figure 3
Figure 3. Electrical characteristics of the α-IGZO TFT.
W/L is 10 (100 μm/10 μm) (a) Transfer characteristic of α-IGZO TFT. (b) Linear scale transfer curve of α-IGZO TFT in mV levels of VDS and VGS. (c) Log scale transfer curve of α-IGZO TFT in mV levels of VDS and VGS. (d) Output curve of the α-IGZO TFT in mV levels of VDS and VGS. (e) Frequency response characteristic at the source/drain (S/D) of the α-IGZO TFT. (f) Frequency response characteristic at the gate of the α-IGZO TFT.
Figure 4
Figure 4. Electrical characteristics of the wireless S/D of the α-IGZO TFT.
(a) VDS with various driving frequency characteristic of micro coil A connected with S/D of the α-IGZO TFT. (b) VDS with various driving frequency characteristic of micro coil E connected with S/D of the α-IGZO TFT. (c) AC signal induced in drain electrode by coil A from 1 kHz to 100 kHz (d) AC signal induced in drain electrode by coil E from 1 kHz to 100 kHz. (e) AC Transfer characteristic of micro coil A connected with S/D of the α-IGZO TFT. (f) AC Transfer characteristic of micro coil E connected with S/D of the α-IGZO TFT.
Figure 5
Figure 5. Characteristics of the wireless gate of the α-IGZO TFT.
(a) AC transfer characteristics of the micro coil (coil E) connected with the gate of the α-IGZO TFT. (b) Electrical characteristics of the wireless rectifying system. D and C mean a diode and a capacitor, respectively. (c) Transfer characteristics of the wireless rectifying system connected with the wireless gate of the α-IGZO TFT. (d) Output characteristic of the wireless rectifying system connected with the gate of the α-IGZO TFT.
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